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SKP02N120 SKB02N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
* 40lower Eoff compared to previous generation * Short circuit withstand time - 10 s * Designed for: - Motor controls - Inverter - SMPS * NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
C
G
E
P-TO-220-3-1 (TO-220AB)
P-TO-263-3-2 (D-PAK) (TO-263AB)
* Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKP02N120 SKB02N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -55...+150 260 C
1)
VCE 1200V
IC 2A
Eoff 0.11mJ
Tj 150C
Package TO-220AB TO-263AB(D2PAK)
Ordering Code Q67040-S4278 Q67040-S4279
Symbol VCE IC
Value 1200 6.2 2.8
Unit V A
ICpul s IF
9.6 9.6
4.5 2 IFpul s VGE tSC Ptot 9 20 10 62 V s W
VGE = 15V, 100VVCC1200V, Tj 150C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02
Power Semiconductors
SKP02N120 SKB02N120
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB
1)
Symbol
Conditions
Max. Value
Unit
RthJC RthJCD RthJA RthJA TO-220AB TO-263AB(D2PAK)
2.0 4.5 62 40
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 1 00 A VCE(sat) V G E = 15 V , I C = 2 A T j =2 5 C T j =1 5 0 C Diode forward voltage VF V G E = 0V , I F = 2 A T j =2 5 C T j =1 5 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 10 0 A , V C E = V G E V C E = 12 0 0V , V G E = 0V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
2)
Symbol
Conditions
Value min. 1200 2.5 typ. 3.1 3.7 2.0 3 1.75 4 1.5 205 28 12 11 7 24 5 max. 3.6 4.3 2.5
Unit
V
A 25 100 100 250 34 15 nC nH A nA S pF
IGES gfs Ciss Coss Crss QGate LE IC(SC)
V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 2 A V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 96 0 V, I C =2 A V G E = 15 V T O - 22 0A B V G E = 15 V ,t S C 10 s 10 0 V V C C 12 0 0 V, T j 15 0 C
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s.
1)
2
Power Semiconductors
2
Jul-02
SKP02N120 SKB02N120
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t F Qrr Irrm d i r r /d t T j =2 5 C , V R = 8 00 V , I F = 2 A, d i F / d t =2 5 0 A/ s 0.10 4.2 400 C A A/s 50 ns td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 80 0 V, I C = 2 A, V G E = 15 V /0 V , R G = 91 , 1) L =1 8 0n H, 1) C = 4 0p F Energy losses include "tail" and diode reverse recovery. 23 16 260 61 0.16 0.06 0.22 30 21 340 80 0.21 0.08 0.29 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 C V C C = 80 0 V, I C = 2 A, V G E = 15 V /0 V , R G = 91 , 1) L =1 8 0n H, 1) C = 4 0p F Energy losses include "tail" and diode reverse recovery. T j =1 5 0 C V R = 8 00 V , I F = 2 A, d i F / d t =3 0 0 A/ s 26 14 290 85 0.27 0.11 0.38 31 17 350 102 0.33 0.15 0.48 mJ ns Symbol Conditions Value min. typ. max. Unit
Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t F
1)
-
90
ns
Qrr Irrm d i r r /d t
0.30 6.7 110
C A A/s
Leakage inductance L and stray capacity C due to dynamic test circuit in figure E.
Power Semiconductors
3
Jul-02
SKP02N120 SKB02N120
12A
Ic
10A tp=10s
10A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
8A TC=80C 6A TC=110C 4A
50s 1A 150s 500s 0.1A 20ms DC
2A
Ic
0.01A
0A 10Hz
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 91)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
7A 60W 6A 50W 5A 4A 3A 2A 1A 0A 25C
40W
30W
20W
10W
0W 25C
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
50C
75C
100C
125C
50C
75C
100C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
Power Semiconductors
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SKP02N120 SKB02N120
7A 6A 5A 4A 3A 2A 1A 0A 0V 7A 6A 5A 4A 3A 2A 1A 0A 0V
IC, COLLECTOR CURRENT
1V
2V
3V
4V
5V
6V
7V
IC, COLLECTOR CURRENT
VGE=17V 15V 13V 11V 9V 7V
VGE=17V 15V 13V 11V 9V 7V
1V
2V
3V
4V
5V
6V
7V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C)
6A 5A 4A 3A 2A 1A 0A 3V Tj=+150C Tj=+25C Tj=-40C
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
7A
6V
5V IC=4A 4V IC=2A 3V IC=1A 2V
IC, COLLECTOR CURRENT
1V
5V
7V
9V
11V
0V -50C
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 20V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Jul-02
SKP02N120 SKB02N120
td(off) td(off)
t, SWITCHING TIMES
100ns
t, SWITCHING TIMES
tf
100ns
tf
td(on) tr
td(on)
tr 10ns 0A 2A 4A 6A 8A 10ns 0 50 100 150
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 9 1 , dynamic test circuit in Fig.E )
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 2A, dynamic test circuit in Fig.E)
6V
td(off)
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
5V max.
t, SWITCHING TIMES
100ns
4V
tf
3V
typ.
td(on)
2V
min.
1V
tr 10ns -50C 0C 50C 100C 150C
0V -50C
0C
50C
100C
150C
Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 2A, RG = 9 1, dynamic test circuit in Fig.E )
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA)
Power Semiconductors
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Jul-02
SKP02N120 SKB02N120
2.0mJ
*) Eon and Ets include losses due to diode recovery.
0.5mJ Ets*
*) Eon and Ets include losses due to diode recovery.
E, SWITCHING ENERGY LOSSES
1.5mJ
E, SWITCHING ENERGY LOSSES
0.4mJ
Ets*
0.3mJ
1.0mJ
Eon*
Eon*
0.2mJ
0.5mJ Eoff
0.1mJ
Eoff
0.0mJ 0A 2A 4A 6A 8A
0.0mJ 0 50 100 150
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 9 1 , dynamic test circuit in Fig.E )
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 2A, dynamic test circuit in Fig.E )
0.4mJ
*) Eon and Ets include losses due to diode recovery.
ZthJC, TRANSIENT THERMAL IMPEDANCE
Ets*
D=0.5 10 K/W 0.2 0.1 0.05 10 K/W 0.02 0.01
R1 R2
-1 0
E, SWITCHING ENERGY LOSSES
0.3mJ Eon* 0.2mJ
R,(K/W) 0.66735 0.70472 0.62778
, (s) 0.04691 0.00388 0.00041
0.1mJ
Eoff
10 K/W single pulse
C 1 = 1 / R 1 C 2 = 2 /R 2
-2
0.0mJ -50C
0C
50C
100C
150C
1s
10s
100s
1ms
10ms 100ms
1s
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 2A, RG = 9 1, dynamic test circuit in Fig.E )
tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T)
Power Semiconductors
7
Jul-02
SKP02N120 SKB02N120
20V
Ciss
VGE, GATE-EMITTER VOLTAGE
15V
C, CAPACITANCE
100pF
10V
UCE=960V
5V
Coss
0V 0nC
5nC
10nC
15n
10pF 0V
Crss 10V 20V 30V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 2A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz)
30s
40A
tsc, SHORT CIRCUIT WITHSTAND TIME
25s
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
11V 12V 13V 14V 15V
30A
20s
15s
20A
10s
10A
5s
0s 10V
0A 10V
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 1200V, start at Tj = 25C)
VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100VVCE 1200V, TC = 25C, Tj 150C)
Power Semiconductors
8
Jul-02
SKP02N120 SKB02N120
250ns 0.4C
Qrr, REVERSE RECOVERY CHARGE
200ns
trr, REVERSE RECOVERY TIME
0.3C
IF=2A
150ns
0.2C
IF=1A
100ns
IF=2A
0.1C
50ns
IF=1A
0ns 100A/s
200A/s
300A/s
400A/s
0.0C 100A/s
200A/s
300A/s
400A/s
d i F / d t, DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR = 800V, Tj = 150C, dynamic test circuit in Fig.E )
d i F / d t, DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (VR = 800V, Tj = 150C, dynamic test circuit in Fig.E )
10A
400A/s
Irr, REVERSE RECOVERY CURRENT
IF=2A IF=1A
OF REVERSE RECOVERY CURRENT
8A
d i r r /d t, DIODE PEAK RATE OF FALL
300A/s
IF=1A IF=2A
6A
200A/s
4A
100A/s
2A
0A 100A/s
200A/s
300A/s
400A/s
0A/s 100A/s
200A/s
300A/s
400A/s
d i F / d t, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery current as a function of diode current slope (VR = 800V, Tj = 150C, dynamic test circuit in Fig.E )
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR = 800V, Tj = 150C, dynamic test circuit in Fig.E )
Power Semiconductors
9
Jul-02
SKP02N120 SKB02N120
7A 6A 5A TJ=150C 4A 3A 2A 1A 0A 0V 3.0V 2.5V
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
IF=4A 2.0V
1.5V
IF=2A
TJ=25C
1.0V
IF=1A
0.5V
1V
2V
3V
4V
0.0V 0C
40C
80C
120C
VF, FORWARD VOLTAGE Figure 25. Typical diode forward current as a function of forward voltage
Tj, JUNCTION TEMPERATURE Figure 26. Typical diode forward voltage as a function of junction temperature
ZthJCD, TRANSIENT THERMAL IMPEDANCE
D=0.5
10 K/W
0
0.2 0.1 0.05
R,(K/W) 0.10109 0.99478 1.07923 1.94890
R1
10 K/W
-1
, (s)= 0.38953 0.04664 0.00473 0.00066
R2
0. 01 0.0 2
single pulse
C 1 = 1 / R 1 C 2 = 2 /R 2
10 K/W 1s
-2
10s
100s
1ms
10ms 100ms
1s
tp, PULSE WIDTH Figure 27. Diode transient thermal impedance as a function of pulse width (D = tp / T)
Power Semiconductors
10
Jul-02
SKP02N120 SKB02N120
TO-220AB
symbol dimensions
[mm] min max 10.30 15.95 0.86 3.89 3.00 6.80 14.00 4.75 0.65 1.32 min
[inch] max 0.4055 0.6280 0.0339 0.1531 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520
A B C D E F G H K L M N P T
9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95
0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374
2.54 typ. 4.30 1.17 2.30 4.50 1.40 2.72
0.1 typ. 0.1693 0.0461 0.0906 0.1772 0.0551 0.1071
TO-263AB (D2Pak)
symbol
dimensions
[mm] min max 10.20 1.30 1.60 1.07 min
[inch] max 0.4016 0.0512 0.0630 0.0421
A B C D E F G H K L M N P Q R S T U V W X Y Z
9.80 0.70 1.00 1.03
0.3858 0.0276 0.0394 0.0406
2.54 typ. 0.65 0.85
0.1 typ. 0.0256 0.0335
5.08 typ. 4.30 1.17 9.05 2.30 4.50 1.37 9.45 2.50
0.2 typ. 0.1693 0.0461 0.3563 0.0906 0.1772 0.0539 0.3720 0.0984
15 typ. 0.00 4.20 0.20 5.20
0.5906 typ. 0.0000 0.1654 0.0079 0.2047
8 max 2.40 0.40 10.80 1.15 6.23 4.60 9.40 16.15 3.00 0.60
8 max 0.0945 0.0157 0.1181 0.0236
0.4252 0.0453 0.2453 0.1811 0.3701 0.6358
Power Semiconductors
11
Jul-02
SKP02N120 SKB02N120
i,v diF /dt tr r =tS +tF Qr r =QS +QF tr r IF tS QS tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
2
r2
r1
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =180nH, and stray capacity C =40pF.
Power Semiconductors
12
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SKP02N120 SKB02N120
Published by Infineon Technologies AG i Gr., Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
13
Jul-02
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